IndiumV3, Main, Repository, bibRecord, 005468

Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers

Identifieur interne : 005468 ( Main/Repository ); précédent : 005467; suivant : 005469

Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers

Auteurs : RBID : Pascal:09-0149736

Descripteurs français

Pascal (Inist)
- Hétérostructure enterrée, Laser semiconducteur, Laser puits quantique, Résonateur Fabry Pérot, Optoélectronique, Grande vitesse, Composé quaternaire, Gallium Arséniure, Indium Phosphure, Gallium Phosphure, Indium Arséniure, Aluminium Arséniure, Epitaxie, InGaAsP, InGaAlAs, As Ga In P, Al As Ga In, 4255P.

English descriptors

KwdEn :
- Aluminium Arsenides, Buried heterostructures, Epitaxy, Fabry-Perot resonators, Gallium Arsenides, Gallium Phosphides, High speed, Indium Arsenides, Indium Phosphides, Optoelectronics, Quantum well lasers, Quaternary compounds, Semiconductor lasers.

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Pascal:09-0149736

Le document en format XML

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<author><name sortKey="Akram, M Nadeem" uniqKey="Akram M">M. Nadeem Akram</name>
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<author><name sortKey="Kjebon, O" uniqKey="Kjebon O">O. Kjebon</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Micro-electronics and Information Technology, Royal Institute of Technology, ELECTRUM 229</s1>
<s2>16440 Kista, Stockholm</s2>
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<author><name sortKey="Chacinski, M" uniqKey="Chacinski M">M. Chacinski</name>
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<author><name sortKey="Schatz, R" uniqKey="Schatz R">R. Schatz</name>
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<author><name sortKey="Berggren, J" uniqKey="Berggren J">J. Berggren</name>
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<author><name sortKey="Berrier, A" uniqKey="Berrier A">A. Berrier</name>
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<seriesStmt><idno type="ISSN">0740-3224</idno>
<title level="j" type="abbreviated">J. Opt. Soc. Am., B Opt. phys. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Arsenides</term>
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<term>Epitaxy</term>
<term>Fabry-Perot resonators</term>
<term>Gallium Arsenides</term>
<term>Gallium Phosphides</term>
<term>High speed</term>
<term>Indium Arsenides</term>
<term>Indium Phosphides</term>
<term>Optoelectronics</term>
<term>Quantum well lasers</term>
<term>Quaternary compounds</term>
<term>Semiconductor lasers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Hétérostructure enterrée</term>
<term>Laser semiconducteur</term>
<term>Laser puits quantique</term>
<term>Résonateur Fabry Pérot</term>
<term>Optoélectronique</term>
<term>Grande vitesse</term>
<term>Composé quaternaire</term>
<term>Gallium Arséniure</term>
<term>Indium Phosphure</term>
<term>Gallium Phosphure</term>
<term>Indium Arséniure</term>
<term>Aluminium Arséniure</term>
<term>Epitaxie</term>
<term>InGaAsP</term>
<term>InGaAlAs</term>
<term>As Ga In P</term>
<term>Al As Ga In</term>
<term>4255P</term>
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<fA11 i1="01" i2="1"><s1>AKRAM (M. Nadeem)</s1>
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<fA11 i1="08" i2="1"><s1>BERRIER (A.)</s1>
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<fA14 i1="01"><s1>Institute of Microsystems Technology, Vestfold University College</s1>
<s2>3103 Tønsberg</s2>
<s3>NOR</s3>
<sZ>1 aut.</sZ>
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<fA14 i1="02"><s1>Department of Micro-electronics and Information Technology, Royal Institute of Technology, ELECTRUM 229</s1>
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<s3>SWE</s3>
<sZ>2 aut.</sZ>
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<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
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<fC03 i1="01" i2="3" l="FRE"><s0>Hétérostructure enterrée</s0>
<s5>11</s5>
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<fC03 i1="01" i2="3" l="ENG"><s0>Buried heterostructures</s0>
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<s5>14</s5>
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<s5>19</s5>
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<s5>19</s5>
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<s5>41</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Gran velocidad</s0>
<s5>41</s5>
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<fC03 i1="07" i2="3" l="FRE"><s0>Composé quaternaire</s0>
<s5>50</s5>
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<s5>50</s5>
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<s5>51</s5>
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<fC03 i1="08" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>51</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Indium Phosphure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Indium Phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Gallium Phosphure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Gallium Phosphides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>54</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>54</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Aluminium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Aluminium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>55</s5>
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<fC03 i1="13" i2="3" l="FRE"><s0>Epitaxie</s0>
<s5>61</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Epitaxy</s0>
<s5>61</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>InGaAsP</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>InGaAlAs</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>As Ga In P</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Al As Ga In</s0>
<s4>INC</s4>
<s5>76</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fN21><s1>103</s1>
</fN21>
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Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers

Experimental characterization of high-speed 1.55 μm buried heterostructure InGaAsP/InGaAlAs quantum-well lasers

Descripteurs français

English descriptors

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri